Characterization of the switching in tunnel MISS devices

Keyphrases

• Switching Devices 100%
• Epilayer 100%
• Metal-insulator 100%
• Barrier Height 100%
• Doping Level 100%
• Trap Density 100%
• Reverse Saturation Current 100%
• Silicon Switch 100%
• Metal-semiconductor-metal 50%
• Tunneling 50%
• Layer Thickness 50%
• Insulator 50%
• Substructure 50%
• Switching Current 50%
• N-Si 50%
• Switching Voltage 50%
• Damping Factor 50%
• Unique Value 50%
• Insulator Thickness 50%
• Trap-assisted Tunneling 50%
• Fabrication Parameters 50%
• Two-band Model 50%
• Injection Factor 50%
• Switching Point 50%
• Bistable Characteristics 50%

Engineering

• Barrier Height 100%
• Doping Level 100%
• Tunnel Construction 100%
• Tunnel 100%
• Bistables 50%
• Band Model 50%
• Switching Point 50%

Material Science

• Silicon 100%
• Density 100%