Characterization of the Failure Site Distribution in MIM Devices Using Zoomed Wavelet Analysis

J. Muñoz-Gorriz*, S. Monaghan, K. Cherkaoui, J. Suñé, P. K. Hurley, E. Miranda

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

3 Citas (Scopus)

Resumen

The angular wavelet analysis is applied to the study of the spatial distribution of breakdown (BD) spots in Pt/HfO2/Pt capacitors with square and circular areas. The method is originally developed for rectangular areas, so a zoomed approach needs to be considered when the observation window does not coincide with the device area. The BD spots appear as a consequence of the application of electrical stress to the device. The stress generates defects within the dielectric film, a process that ends with the formation of a percolation path between the electrodes and the melting of the top metal layer because of the high release of energy. The BD spots have lateral sizes ranging from 1 μm to 3 μm and they appear as a point pattern that can be studied using spatial statistics methods. In this paper, we report the application of the angular wavelet method as a complementary tool for the analysis of the distribution of failure sites in large-area metal–insulator–metal (MIM) devices. The differences between considering a continuous or a discrete wavelet and the role played by the number of BD spots are also investigated.

Idioma originalInglés
Páginas (desde-hasta)5033-5038
Número de páginas6
PublicaciónJournal of Electronic Materials
Volumen47
N.º9
DOI
EstadoPublicada - 1 sept 2018

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