Band bending and quasi-2deg in the metallized β-SiC(001) surface

R. Rurali; E. Wachowicz; P. Hyldgaard; P. Ordejón

doi:10.1002/pssr.200802166

Band bending and quasi-2deg in the metallized β-SiC(001) surface

R. Rurali, E. Wachowicz, P. Hyldgaard, P. Ordejón

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

9 Citas (Scopus)

Resumen

We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Idioma original	Inglés
Páginas (desde-hasta)	218-220
Publicación	Physica Status Solidi - Rapid Research Letters
Volumen	2
DOI	https://doi.org/10.1002/pssr.200802166
Estado	Publicada - 1 oct 2008

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abstract = "We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. {\textcopyright} 2008 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

author = "R. Rurali and E. Wachowicz and P. Hyldgaard and P. Ordej{\'o}n",

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T1 - Band bending and quasi-2deg in the metallized β-SiC(001) surface

AU - Rurali, R.

AU - Wachowicz, E.

AU - Hyldgaard, P.

AU - Ordejón, P.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://www.scopus.com/pages/publications/70249131762

U2 - 10.1002/pssr.200802166

DO - 10.1002/pssr.200802166

M3 - Article

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VL - 2

SP - 218

EP - 220

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

ER -

Band bending and quasi-2deg in the metallized β-SiC(001) surface

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