Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model
Emili Salvador Aguilera, Mireia Bargallo Gonzalez, Francesca Campabadal, Javier Martin-Martinez, Rosana Rodriguez, Enrique Miranda
Profundice en los temas de investigación de 'Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model'. En conjunto forman una huella única.