Analysis of the successive breakdown statistics of multilayer Al₂O₃/HfO₂ gate stacks using the time-dependent clustering model

Keyphrases

• Aluminum Oxide 100%
• HfO2 100%
• Clustering Model 100%
• Breakdown Statistics 100%
• Gate Stack 100%
• Successive Breakdown 100%
• Conducting Channels 66%
• Gate Dielectric 33%
• Oxides 33%
• Leakage Current 33%
• High Dispersion 33%
• Dielectric Film 33%
• Constant Voltage 33%
• Clustering Methods 33%
• Oxide Film 33%
• Conducting Properties 33%
• Clustering Factor 33%
• Metal-insulator-semiconductor Structures 33%
• Time Characteristics 33%
• Nanolaminates 33%
• High-k Material 33%
• Injection Barrier 33%
• Time to Breakdown 33%
• Statistical Theory 33%
• Weibull Statistics 33%
• High Injection 33%
• Failure Statistics 33%
• Barrier Materials 33%

Engineering

• Oxide Film 100%
• Constant Voltage 100%
• Gate Dielectric 100%
• Characteristic Time 100%
• Gate Stack 100%
• Semiconductor Structure 100%
• Barrier Material 100%
• Weibull Statistic 100%
• Dielectric Films 100%

Material Science

• Al2O3 100%
• Semiconductor Structure 33%
• Dielectric Films 33%
• Oxide Compound 33%
• Oxide Film 33%
• Dielectric Material 33%