TY - JOUR
T1 - Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
AU - Maestro, M.
AU - Martin-Martinez, J.
AU - Diaz, J.
AU - Crespo-Yepes, A.
AU - Gonzalez, M. B.
AU - Rodriguez, R.
AU - Campabadal, F.
AU - Nafria, M.
AU - Aymerich, X.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - © 2015 Elsevier B.V. The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions.
AB - © 2015 Elsevier B.V. The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions.
KW - Fast ramped voltages
KW - Metal-insulator-semiconductor (MIS)
KW - Resistive switching random access memory (RRAM)
KW - Time domain measurements
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84928944491&partnerID=MN8TOARS
U2 - 10.1016/j.mee.2015.04.057
DO - 10.1016/j.mee.2015.04.057
M3 - Article
SN - 0167-9317
VL - 147
SP - 176
EP - 179
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -