A fully integrated programmable dual-band RF filter based on electrically and mechanically coupled CMOS-MEMS resonators

J. Giner*, A. Uranga, J. L. Muñóz-Gamarra, E. Marigó, N. Barniol

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

13 Citas (Scopus)

Resumen

In this paper, a novel fully integrated CMOS-MEMS filter implemented on a commercial CMOS technology is presented. The combination of mechanical and electrical coupling is used to enhance the response of the band pass filter. In particular, a 20 dB shape factor as low as 2 and a 35 dB stopband rejection are achieved. Moreover, the topology of the device allows obtaining a dual-bandpass filter behavior, presenting a tunable bandwidth and a deep notch between bands. Results show a dual-band filter with a 22 dB inner stopband rejection, center frequencies at 27.5 and 27.8 MHz, respectively, and a 0.6% relative bandwidth.

Idioma originalInglés
Número de artículo055020
PublicaciónJournal of Micromechanics and Microengineering
Volumen22
N.º5
DOI
EstadoPublicada - 1 may 2012

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