A drain current model for Schottky-barrier CNT-FETs

David Jiménez; Xavier Cartoixà; Enrique Miranda; Jordi Suñé; Ferney Alveiro Chaves; Stephan Roche

doi:10.1007/s10825-006-0022-9

A drain current model for Schottky-barrier CNT-FETs

David Jiménez, Xavier Cartoixà, Enrique Miranda, Jordi Suñé, Ferney Alveiro Chaves, Stephan Roche

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

5 Citas (Scopus)

Resumen

We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.

Idioma original	Inglés
Páginas (desde-hasta)	361-364
Publicación	Journal of Computational Electronics
Volumen	5
DOI	https://doi.org/10.1007/s10825-006-0022-9
Estado	Publicada - 1 dic 2006

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title = "A drain current model for Schottky-barrier CNT-FETs",

abstract = "We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. {\textcopyright} Springer Science+Business Media LLC 2007.",

keywords = "Carbon nanotubes, Compact model, Field effect transistor",

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AU - Jiménez, David

AU - Cartoixà, Xavier

AU - Miranda, Enrique

AU - Suñé, Jordi

AU - Chaves, Ferney Alveiro

AU - Roche, Stephan

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.

AB - We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.

KW - Carbon nanotubes

KW - Compact model

KW - Field effect transistor

U2 - 10.1007/s10825-006-0022-9

DO - 10.1007/s10825-006-0022-9

M3 - Article

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VL - 5

SP - 361

EP - 364

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

ER -

A drain current model for Schottky-barrier CNT-FETs

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