A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich

Producción científica: Contribución a una revista › Artículo › Investigación

Idioma original	Inglés
Páginas (desde-hasta)	171-174
Publicación	Microelectronic Engineering
Volumen	48
Estado	Publicada - 1 ene 1999

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title = "A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction",

author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "48",

pages = "171--174",

journal = "Microelectronic Engineering",

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publisher = "Elsevier",

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TY - JOUR

T1 - A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction

AU - Miranda, E.

AU - Suñé, J.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

PY - 1999/1/1

Y1 - 1999/1/1

M3 - Article

SN - 0167-9317

VL - 48

SP - 171

EP - 174

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -