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Keyphrases
MOSFET
100%
Electron Transport
33%
Heterostructure Device
16%
Failure Mechanism
16%
Approximate Model
16%
Dielectric Degradation
16%
Quantum Monte Carlo
16%
Threshold Voltage
16%
MOSFET Reliability
16%
Reliability Methodology
16%
Physics-based Compact Model
16%
Flexible Reliability
16%
Dynamic Properties
16%
Reliability Assurance
16%
Failure Criterion
16%
Subcircuit
16%
Double-gate MOSFET
16%
High-frequency Noise
16%
Landauer
16%
Continuous Scaling
16%
Oxide Thickness
16%
1D Heterostructure
16%
Mixed-signal System
16%
Circuit Application
16%
International Technology Roadmap for Semiconductors
16%
High-frequency Applications
16%
Sub-100 Nm
16%
Bohm
16%
High-frequency Behavior
16%
Scaling Process
16%
Dielectric Breakdown
16%
Circuit Performance
16%
Operating Voltage
16%
Compact Modeling
16%
Technology Node
16%
Device Failure
16%
Integrated Circuits
16%
Performance Evaluation
16%
Simulation Performance
16%
Transistor
16%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Operating Voltage
12%
Failure Criterion
12%
Oxide Thickness
12%
Failure Mechanism
12%
Dynamic Property
12%
Figure of Merit
12%
Heterojunctions
12%
Frequency Behavior
12%
Approximate Model
12%
Subcircuit
12%
Frequency Noise
12%
Circuit Performance
12%
Dielectrics
12%
Scaling Process
12%
Nodes
12%
Integrated Circuit
12%