Detalles del proyecto
Descripción
The TELEPHON project has advanced the state-of-the-art in the field of simulation of electronic and thermal transport by including new phenomena appearing at ultrashort time (ps) and length (nm) scales. Our developed models cover from the microscopic interaction between individual particles following the rules of quantum mechanics to high-level description by means of macroscopic magnitudes. These models have allowed a deeper insight on different phenomena which are nowadays relevant for emerging devices. For example, tunneling electrons have been coupled to the quantized electromagnetic field, leading to new device concepts. We have also achieved a better understanding on how the hydrodynamic behavior affects present-day device operation, which will allow to design devices with improved
performance and eventually novel devices.
Our improved understanding at the fundamental level has allowed us to create a high-level Verilog model of the operation of graphene and other 2D materials field effect transistors, with discussions for adoption by the Compact Model Coalition, propose a new THz generator and a remote electromechanical
transducer system; the latter two in the process of being patented.
performance and eventually novel devices.
Our improved understanding at the fundamental level has allowed us to create a high-level Verilog model of the operation of graphene and other 2D materials field effect transistors, with discussions for adoption by the Compact Model Coalition, propose a new THz generator and a remote electromechanical
transducer system; the latter two in the process of being patented.
| Estado | Finalizado |
|---|---|
| Fecha de inicio/Fecha fin | 1/01/19 → 30/09/22 |
Financiación
- Ministerio de Economía y Competitividad (MINECO): 103.213,00 €

- Fondo Europeo de Desarrollo Regional (FEDER)

Huella digital
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Producción científica
- 1 Artículo
-
Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
Mavredakis, N., Pacheco-Sánchez, A., Garcia Cortadella, R., Guimerà-Brunet, A., Garrido, J. A. & Jiménez Jiménez, D., 28 abr 2025, En: IEEE transactions on electron devices. 72, 6, p. 3314-3321 8 p.Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva
Acceso abierto4 El enlace se abre en una pestaña nueva Citas (Scopus)
Tesis doctorales
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Structural effects on the performance of 2D metal/semiconductor contacts and RRAM devices: first-principles and molecular dynamics studies
URQUIZA TOLEDO, M. L. (Autor/a), Cartoixa Soler, X. (Director/a), 18 dic 2020Tesis doctoral