INIS
devices
100%
simulation
83%
layers
55%
voltage
55%
spices
53%
modeling
50%
compacts
50%
randomness
42%
pattern recognition
42%
experimental data
39%
distribution
32%
values
30%
equations
28%
stacks
21%
breakdown
21%
performance
21%
time dependence
21%
minimization
21%
assessments
21%
connections
21%
statistics
21%
curves
21%
cluster model
21%
accuracy
17%
monte carlo method
17%
simulators
16%
dielectrics
16%
images
14%
filaments
14%
mapping
14%
exercise
12%
i-v characteristic
12%
flexibility
12%
operation
10%
hands
10%
oxides
10%
comparative evaluations
10%
valence
10%
approximations
10%
electrons
10%
shape
10%
extraction
10%
datasets
10%
films
10%
memory devices
10%
applications
7%
humans
7%
numerical solution
7%
heat
7%
transport
7%
weight
7%
origin
5%
information
5%
interfaces
5%
tables
5%
leakage current
5%
metals
5%
barriers
5%
dispersions
5%
hysteresis
5%
injection
5%
failures
5%
semiconductor materials
5%
output
5%
Engineering
Resistive
64%
SPICE
48%
Current-Voltage Characteristic
41%
Resistive Random Access Memory
21%
Series Resistance Effect
21%
Weibull Statistic
21%
Barrier Material
21%
Gate Stack
21%
Simple Procedure
21%
Gate Dielectric
21%
Oxide Film
21%
Line Resistance
21%
Semiconductor Structure
21%
Observables
21%
Perceptron
21%
Parameter Distribution
21%
Constant Voltage
21%
Pattern Recognition
21%
Model Parameter
21%
Characteristic Time
21%
Dielectric Film
21%
Series Resistance
10%
Random Access Memory Device
10%
Illustrates
10%
Simulators
8%
Subcircuit
7%
Keyphrases
At-fault
21%
Stuck-at
21%
Estimand
10%
Candidate Distribution
10%
High Injection
7%
Weibull Statistics
7%
Barrier Materials
7%
Failure Statistics
7%
Stanford Model
5%
Snapback
5%
Sneak Path
5%
Selector Device
5%
Iterative Calibration
5%
Interconnection Resistance
5%