Keyphrases
Bilayer Graphene
84%
Graphene Field-effect Transistor
78%
Bias Dependence
69%
Graphene FET
66%
Low-frequency Noise
53%
Graphene Transistor
37%
Short Channel
34%
Compact Modeling
31%
Velocity Saturation
30%
Contact Resistance
29%
Gate Voltage
22%
Saturation Effect
20%
Parameter Extraction
20%
High-frequency Applications
20%
Transistor
19%
Hysteresis
17%
Charge Neutrality Point
16%
Physics-based
16%
Neural Sensing
13%
Thermal Noise Modeling
13%
2D FETs
13%
Degradation Resistance
13%
Mobility Degradation
13%
Noise Parameters Extraction
13%
Modeling Technology
13%
Noise Characterization
13%
Graphene-metal Contact
13%
Integrated Circuits
13%
Few-layer
13%
Frequency Dependence
13%
Circuit-based
13%
Extraction Methods
13%
Low Noise
13%
High-frequency Performance
13%
Model Extraction
13%
High Density
13%
Ambipolarity
13%
Transistor Technology
13%
Graphene Solution
13%
Solution-gated Field-effect Transistor
13%
Small-signal Model
13%
Device-circuit Co-design
13%
Carrier number Fluctuations
13%
High Electric Field
11%
Intrinsic Gain
11%
Measurement Scheme
11%
Maximum Oscillation Frequency
11%
Device Characteristics
10%
Graphene
8%
Circuit Design
8%
Engineering
Graphene
100%
Layer Graphene
84%
Field-Effect Transistor
81%
Field Effect Transistors
80%
Frequency Noise
55%
Isolation Method
31%
Gate Voltage
22%
Figure of Merit
21%
Saturation Effect
19%
Single Channel
19%
Experimental Observation
17%
Current Drain
14%
Electric Field
13%
Frequency Shift Keying
13%
Thermal Noise
13%
Phase Shift
13%
Internals
13%
Front End of Line
13%
Carbon Nanotubes
13%
Proof-of-Concept
13%
Signal Model
13%
Energy Dissipation
13%
Proper Design
13%
Silicon Technology
13%
Modulation Scheme
13%
Communication System
13%
Integrated Circuit
13%
Multifunctionality
13%
Proposal Design
13%
Drain Voltage
8%
High Electric Field
8%
Source Voltage
6%
Control Channel
6%
Device Performance
6%
Channel Resistance
6%
Circuit Design
6%
Gate Bias
6%
Analytical Model
6%
Radio Frequency
5%
Channel Region
5%
Measurement Noise
5%
Carrier Concentration
5%
