Keyphrases
HfO2
76%
Resistive Switching
47%
Resistive Random Access Memory (ReRAM)
45%
Soft Breakdown
36%
Resistive Switching Device
35%
Conduction Characteristics
30%
Ultrathin
30%
Memristor
28%
Conductance
27%
I-V Characteristics
27%
Post-breakdown
26%
Oxides
25%
Series Resistance
25%
Memdiode
23%
Conductive Filament
23%
Quantum Point Contact
22%
Leakage Current
22%
Current-voltage Characteristics
22%
Electron Transport
22%
Memory Device
19%
Dielectric Breakdown
19%
Ultra-thin Gate Oxide
18%
Electrical Stress
18%
Capacitors
17%
SPICE Model
16%
Breakdown Current
16%
Memristive Devices
16%
Progressive Breakdown
16%
Hard Breakdown
16%
Compact Model
15%
Silica
15%
RRAM Devices
15%
Constriction
14%
Low Resistance State
14%
Gate Stack
14%
Metal-insulator-metal Structure
14%
Temperature Effect
14%
Current-voltage (I-V) Characteristics
13%
Spatial Distribution
13%
Gate Oxide
13%
Breakdown Path
13%
Dielectric Film
13%
SiO2 Film
12%
Constant Voltage Stress
12%
Constant Voltage
12%
Set Voltage
12%
MOS Structure
12%
Aluminum Oxide
12%
Nanolaminates
11%
Mesoscopic
11%
Engineering
Resistive
100%
Current-Voltage Characteristic
59%
Dielectrics
39%
Gate Oxide
33%
Constant Voltage
29%
Resistive Random Access Memory
24%
Series Resistance
23%
Metal-Insulator-Metal
23%
Contact Point
20%
Oxide Layer
18%
Random Access Memory Device
18%
Conductive Filament
17%
Tunnel Construction
16%
SPICE
15%
Silicon Dioxide
14%
Semiconductor Structure
13%
Failure Event
11%
Contact Model
11%
Power Law Model
11%
Metal Oxide Semiconductor
11%
Dielectric Films
11%
Failure Mode
10%
Model Parameter
10%
Gate Dielectric
10%
High Resistance State
10%
Oxide Thickness
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Parallel Resistance
9%
Characteristic Time
9%
Sio2 Film
8%
Energy Engineering
8%
Current Drain
8%
Gate Stack
8%
Experimental Result
8%
Reliability Availability and Maintainability (Reliability Engineering)
7%
Temperature Dependence
7%
Oxide Film
7%
Experimental Observation
7%
Conductive
7%
Memory State
7%
Circuit Simulation
7%
Metal Gate
7%
Equivalent Circuit Model
7%
Energy Dissipation
7%
Gallium Arsenide
7%
Dielectric Film
7%
Stress Induced Leakage Current
6%
Equivalent Circuit
6%
Schottky Barrier
6%
Series Resistance Effect
6%
