Keyphrases
Graphene Field-effect Transistor
68%
Graphene
45%
Field-effect Transistors
32%
Drain Current
31%
Undoped
28%
Two Dimensional
27%
Carbon Nanotubes
25%
Bilayer Graphene
25%
Capacitance
24%
Radiofrequency Lesion
24%
Schottky Barrier
23%
Drain Current Model
23%
Transistor
22%
Double-gate MOSFET
22%
Carbon Nanotube Field Effect Transistor (CNTFET)
22%
Graphene FET
22%
Large-signal Model
22%
Compact Model
22%
Contact Resistance
21%
MOSFET
20%
Poisson Equation
20%
Charge Model
19%
Small-signal Model
19%
Hexagonal Boron Nitride (h-BN)
17%
Low-frequency Noise
17%
Circuit Simulator
17%
Capacitance Model
17%
Double Gate
16%
Field Effect
16%
Resistive Switching
16%
Intrinsic Capacitance
16%
Radio Frequency Performance
14%
Surface Potential
14%
Graphene-metal Contact
14%
Physics-based Model
13%
Radio Frequency
13%
Drift-diffusion
13%
Venous Thromboembolism
13%
Explicit Model
13%
Scanning Near-field Optical Microscopy
13%
Beam Propagation Method
13%
Carrier Transport
13%
Compact Modeling
13%
HfO2
13%
Bias Dependence
12%
Conductance
12%
Current-voltage Characteristics
11%
Surrounding-gate MOSFET (SGMOSFET)
11%
Gate Metal
11%
Nanotubes
11%
Engineering
Field-Effect Transistor
100%
Graphene
70%
Metal-Oxide-Semiconductor Field-Effect Transistor
66%
Field Effect Transistors
43%
Current Drain
43%
Radio Frequency
31%
Two Dimensional
29%
Signal Model
27%
Carbon Nanotubes
25%
Schottky Barrier
22%
Resistive
20%
Layer Graphene
19%
Frequency Noise
18%
Current-Voltage Characteristic
17%
Computer Simulation
16%
Good Agreement
15%
Barrier Height
15%
Simulators
14%
Nitride
14%
Series Resistance
13%
Control Model
13%
Gate Dielectric
13%
Gate Oxide
13%
Dielectrics
12%
Surface Potential
12%
2D Material
11%
Applied Voltage
11%
Signal Modeling
11%
Tunnel Construction
10%
Isolation Method
9%
Channel Length
9%
Figure of Merit
9%
Quantum Wire
8%
Energy Dissipation
8%
Limiting Factor
8%
Boundary Condition
8%
Film Silicon
8%
Analytical Model
7%
Nanoscale
7%
Amplifier
6%
Nanotubes
6%
Internals
6%
Lyapunov Exponent
6%
Potential Function
6%
Diffusion Model
6%
Single Channel
6%
Closed Form Expression
6%
Multichannel
5%
Numerical Solution
5%
Electrostatics
5%
