Keyphrases
Resistive Switching
73%
Aging
65%
Resistive Random Access Memory (ReRAM)
57%
MOSFET
55%
Ultrathin
47%
Switching Phenomenon
46%
Transistor
40%
Dielectric Breakdown
38%
Random Telegraph Noise
38%
Off-state
38%
CMOS Inverter
38%
RF CMOS
33%
FDSOI
31%
Linear Power Amplifier
28%
Memristor
28%
Resistive Switching Device
28%
Aging Mechanism
25%
HfO2
23%
NWFET
22%
Performance Degradation
22%
Circuit Level
20%
Aging Effect
19%
Noise Characterization
19%
Physical Unclonable Function
19%
Gate Stack
19%
Characterization Techniques
19%
High-resolution
19%
Inkjet Print
19%
Power Amplifier
19%
MOSFET Aging
19%
Pulse Stress
19%
Device Level
18%
Threshold Voltage
17%
High-k Dielectric
16%
Circuit Degradation
15%
Set Voltage
15%
Stress Conditions
15%
Injected Charge
15%
Conductive Filament
15%
Dielectric Stack
14%
Organic Thin-film Transistors
14%
Current Limiting
14%
Electrical Stress
14%
Temperature Effect
14%
Parameter Degradation
14%
Device Degradation
14%
Design Phase
14%
Compact Model
14%
Reset Process
14%
Amplifier Circuit
14%
Engineering
Resistive
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
60%
Dielectrics
56%
Power Amplifier
47%
Inverter
38%
Resistive Random Access Memory
28%
Thin-Film Transistor
23%
Aging Effect
23%
Combined Effect
22%
Field Effect Transistors
22%
Performance Degradation
21%
High Resolution
21%
Gate Stack
19%
Reliability Availability and Maintainability (Reliability Engineering)
19%
Characterization Method
19%
Noise Characterization
19%
Stress Condition
19%
Nanoscale
19%
Gate Dielectric
16%
Conductive Filament
14%
Set Process
14%
Reset Process
14%
Temperature Dependence
14%
Design Phase
14%
Amplifier Circuit
12%
Dielectric Layer
11%
Current Ratio
11%
Microsecond
9%
Current Limit
9%
Statistical Characterization
9%
Induced Noise
9%
SPICE
9%
Mosfets
9%
Analog Circuit
9%
Measurement Noise
9%
Time Domain
9%
Logic Function
9%
Measurement Time
9%
Stress State
9%
Gate Voltage
9%
Experimental Observation
9%
Drain Voltage
9%
Initial Design
9%
Transients
9%
Equivalent Voltage
9%
Portable Device
9%
Nonvolatile Memory
9%
Input Signal
9%
Integrated Circuit
9%
Signal Power
9%
