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Keyphrases
Carbon Nanotube Field Effect Transistor (CNTFET)
50%
Memdiode
46%
Graphene Field-effect Transistor
44%
Memristor
42%
Resistive Switching Device
39%
Transistor
38%
Contact Resistance
37%
Resistive Switching
33%
Compact Model
32%
Extraction Methods
32%
Graphene FET
31%
Resistive Random Access Memory (ReRAM)
30%
FDSOI
28%
Bilayer Graphene
26%
Compact Modeling
25%
SPICE Model
25%
RRAM Devices
24%
Parameter Extraction
22%
Two Dimensional
21%
Memristive Devices
20%
Field-effect Transistors
20%
Device Level
19%
Physics-based
19%
Bias Dependence
19%
Circuit Simulation
18%
Transistor Technology
18%
Small-signal Model
17%
NWFET
17%
Time-dependent Variability
16%
Device Performance
16%
Bipolar Subtypes
15%
Off-state
15%
Random Telegraph Noise
15%
Low-frequency Noise
15%
Resistance Extraction
15%
2D Materials
15%
Device-independent
15%
Displacement Current
15%
Cyclic Variation
15%
Power Dissipation
15%
Quasi-static
15%
Neural Network
15%
Short Channel
15%
Carbon Nanotubes
15%
Graphene Transistor
14%
Dielectric Breakdown
14%
Stochastic Resonance
14%
Drain Current
13%
Electron Transport
13%
Conduction Characteristics
13%
Conductance
13%
LTspice
13%
Y-function Method
13%
Landauer
13%
Electronic Devices
13%
Hexagonal Boron Nitride (h-BN)
13%
Velocity Saturation
12%
Dielectric
12%
Aging
12%
Electron Devices
12%
Schottky Barrier Height
12%
High-frequency Applications
12%
HfO2
12%
Schrödinger Equation
12%
Memory Device
12%
Graphene
11%
Conditional Wave Function
11%
Quantum Mechanics
11%
Circuit Level
11%
Time Constant Distribution
10%
Heterojunction Bipolar Transistors
10%
Complementary Resistive Switching
10%
Height Extraction
10%
Mobility Degradation
10%
P-n Junction
10%
Noise Behavior
10%
Variability Modeling
10%
Spike-timing-dependent Plasticity
10%
Neuromorphic System
10%
Set Voltage
10%
Physical Unclonable Function
10%
Optomechanics
10%
Circuit Simulator
10%
Degrees of Freedom
10%
Spices
10%
Cycle-to-cycle
9%
Integrated Circuits
9%
Analytical Expression
9%
Device Architecture
9%
Gate Dielectric
9%
I-V Characteristics
8%
Crossbar Array
8%
Aging Mechanism
8%
Boltzmann Transport Equation
8%
RF Applications
8%
Constriction
8%
Simulation Framework
8%
Gate Voltage
8%
Saturation Effect
8%
Phonons
7%
Engineering
Field Effect Transistors
100%
Resistive
76%
Field-Effect Transistor
71%
Graphene
57%
SPICE
39%
Isolation Method
34%
Layer Graphene
33%
Memristor
32%
Dielectrics
30%
Carbon nanotube field effect transistors
28%
Frequency Noise
27%
Resistive Random Access Memory
21%
Two Dimensional
20%
Model Parameter
19%
Current-Voltage Characteristic
19%
Circuit Simulation
18%
Carbon Nanotubes
17%
Current Drain
17%
Experimental Result
16%
2D Material
16%
Constant Time
15%
Nanowire
15%
Bipolar Type
15%
One Dimensional
14%
Electrical Device
14%
Channel Resistance
14%
Signal Model
14%
Energy Dissipation
13%
Device Performance
13%
Random Access Memory Device
12%
Nitride
12%
Schottky Barrier Height
12%
Kirchhoff
12%
Nanoscale
12%
Oxide Layer
11%
Figure of Merit
11%
Gate Voltage
11%
Magnetic Field
11%
Simulation Result
11%
Terahertz
10%
Length Method
10%
Transfer Length
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Integrated Circuit
10%
Heterojunction bipolar transistors
10%
Physical unclonable function
10%
Signal Modeling
9%
Electric Field
9%
Circuit Designer
9%
Electron Devices
9%
Experimental Observation
9%
Realization
8%
Boltzmann Equation
8%
Radio Frequency
8%
Test Structure
8%
Quantum Transport
8%
Gate Dielectric
7%
Statistical Characterization
7%
Observables
7%
Oxygen Content
7%
Design Parameter
7%
Dielectric Films
7%
Microcantilevers
7%
Circuit Design
7%
Drain Voltage
7%
Saturation Effect
7%
Carrier Concentration
7%
Combined Effect
7%
Multiscale
7%
Performance Parameter
7%
Conductive Filament
7%
Silicon on Insulator
7%
Multifunctionality
6%
Degree of Freedom
6%
Inverter
6%
Poisson Process
6%
Maxwell's Equation
6%
Silicon Technology
6%
Starting Point
6%
Parameter Distribution
6%
Hysteresis Loop
6%
High Data Rate
6%
Communication System
6%
Insertion Loss
6%
Memory State
6%
Modulation Scheme
6%
Phase Shift
6%
Front End of Line
6%
Frequency Shift Keying
6%
Single Channel
5%
Metrics
5%
Analytical Result
5%
Noise Analysis
5%
Fits and Tolerances
5%
Rapid Thermal Annealing
5%
Heterostructures
5%
Passivation
5%
Room Temperature
5%
Inkjet Printing
5%
Focused Ion Beam
5%