Micro and nanoelectronics industry requires multiple lines of research for introducing continuous improvements in electronic devices in terms of performance, functionality and scalability. One of these improvements focuses on the idea of using the dielectric breakdown phenomenon as a principle of operation of these devices. This idea has generated much interest recently, especially in the field of non-volatile memories. _x000D_ Thus, the research done in this thesis focuses its attention around the dielectric breakdown phenomena and the subsequent filamentary conduction observed in metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) devices with high dielectric permittivity. Specifically, this work focuses on the study of three main objectives which have resulted in the publication of several articles and this has allowed presenting the thesis as a compendium of publications._x000D_ The study shows results in relation to the resistive switching phenomenon observed in MOS devices, with particular interest in the phenomenon of Threshold Switching described in terms of the quantum point contact model. Furthermore, results regarding the study of the field-effect on dielectric breakdown paths generated in planar MIM structures are also described. With this goal, it is shown the design, simulation, fabrication and characterization of several devices whose critical dimensions are in the order of a few nanometers. The characterization of these structures shows preliminary results that point in the direction of the expected field effect. Finally, the spatial and temporal statistics of multiple breakdown paths, observed in the top electrode of MOS and MIM capacitors as a result of the applied electrical stress, is analyzed. Three methods were developed to analyze statistical distributions for detecting possible deviations from a complete spatial random process. One is based on the distances between neighboring filaments of order k; the second one concerns the spatio-temporal characterization of the observed filaments; and finally a method is presented, in which expressions have been developed, for the study of the statistical distributions of the distances and angles of the spots relative to a fixed point, which is associated with the charge injection point used in the generation of events.
Filamentos conductores de ruptura dieléctrica en aislantes delgados
Saura Mas, X. (Author). 10 Dec 2014
Student thesis: Doctoral thesis
Student thesis: Doctoral thesis