Diseño y fabricación de sistemas micro/nano electromecánicos integrados monolíticamente para aplicaciones de sensores de masa y sensores biológicos con palancas como elementos transductores

Abstract

The objective of this thesis work is to implement high resolution sensors, formed by micro/nano electromechanical systems integrated monolithically, using cantilevers as transducer and silicon technologies for the fabrication. In particular, the optimal fabrication technology is determined to implement cantilever based sensors for air or vacuum applications and liquid ones. Detection and excitation optimal techniques for cantilever based systems are established. The compatibilization between the sensors fabrication and the CMOS technology is obtained, to achieve the on chip monolithic system. To achieve these objectives, three different demonstrators are fabricated. Two of them are mass sensors formed by resonant cantilevers; the third one is a system able to work in liquid with electrochemical detection. The first demonstrator is a mass sensor formed by a polysilicon cantilevers array integrated monolithically with the readout circuitry. As structural layer, one of the polysilicon layers of the CMOS technology is used (this technology is CMOS CNM25 2P, 2M with two polysilicon layers and to metal ones). Arrays of four and eight cantilevers have been designed, these designs allow multiplexed measures for individual cantilevers and differential measures. On one hand the versatility of the system is increased, by the other differential measures increase the sensor resolution. During CMOS process, fabrication areas are defined; transducers are defined as a post process. After electrical characterization of the system, it can be conclude that the monolithic integration is possible, and it is disposed a versatile system, with mass resolution lower than 40 ag/Hz. A mass sensor formed by resonant cantilevers of crystalline silicon forms the second demonstrator. To use crystalline silicon as structural layer a new technology is developed: from SOI (Silicon on Insulator) substrates, different regions are defined to implement the CMOS on bulk silicon and regions with SOI structure to the transducers. Once, the technology is defined, mass sensors are implemented (like in first demonstrator) increasing the characteristics of the structural layer. IT has been proved the working way of these sensors, with a mass resolution of 7 ag/Hz. The developed technology allows a new platform for MEMS/NEMS fabrications, by monolithic integration and using crystalline silicon as structural layer. Finally, a third device has been defined, which allows to work in liquid. As transducer a crystalline silicon cantilever is used. The deflexion of the cantilever (caused by superficial stress due to molecules adherence) is measured by variations in the electrochemical current between the cantilever and an electrode place close to it, inside a bipotenciostat system. The separation between both electrodes must be smaller than 100nm, to measure this current. The definition of this gaps suppose an important technological issue, due that gaps have to be defined in one micron thick silicon, with a wide smaller than 100 nm. Lithography techniques with nanometric resolutions (atomic force microscope, AFM, and focus ion beam, FIB) combined with reactive ion etching (RIE) are used, together with direct etching with FIB.

Date of Award	21 Jul 2005
Original language	Undefined/Unknown
Supervisor	Nuria Barniol Beumala (Director)