Yttria-stabilized zirconia/SrTiO<inf>3</inf> oxide heteroepitaxial interface with symmetry discontinuity

M. Scigaj; N. Dix; M. Cabero; A. Rivera-Calzada; J. Santamaria; J. Fontcuberta; G. Herranz; F. Sánchez

doi:10.1063/1.4885089

Yttria-stabilized zirconia/SrTiO<inf>3</inf> oxide heteroepitaxial interface with symmetry discontinuity

M. Scigaj, N. Dix, M. Cabero, A. Rivera-Calzada, J. Santamaria, J. Fontcuberta, G. Herranz, F. Sánchez

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

© 2014 MP Publishing LLC. We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO3(l 10) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with 1110]YSZ(001)//[001]SrTiO3(l 10) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO3(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.

Original language	English
Article number	A3
Journal	Applied Physics Letters
Volume	104
Issue number	25
DOIs	https://doi.org/10.1063/1.4885089
Publication status	Published - 1 Jan 2014

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title = "Yttria-stabilized zirconia/SrTiO3 oxide heteroepitaxial interface with symmetry discontinuity",

abstract = "{\textcopyright} 2014 MP Publishing LLC. We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO3(l 10) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with 1110]YSZ(001)//[001]SrTiO3(l 10) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO3(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.",

author = "M. Scigaj and N. Dix and M. Cabero and A. Rivera-Calzada and J. Santamaria and J. Fontcuberta and G. Herranz and F. S{\'a}nchez",

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T1 - Yttria-stabilized zirconia/SrTiO3 oxide heteroepitaxial interface with symmetry discontinuity

AU - Scigaj, M.

AU - Dix, N.

AU - Cabero, M.

AU - Rivera-Calzada, A.

AU - Santamaria, J.

AU - Fontcuberta, J.

AU - Herranz, G.

AU - Sánchez, F.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - © 2014 MP Publishing LLC. We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO3(l 10) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with 1110]YSZ(001)//[001]SrTiO3(l 10) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO3(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.

AB - © 2014 MP Publishing LLC. We show that yttria-stabilized zirconia (YSZ) films deposited on structurally dissimilar SrTiO3(l 10) substrates exhibit two-dimensional layer-by-layer growth. We observed that, up to a thickness of about 15 nm, the square (001) basal plane of the cubic YSZ grows epitaxially on the rectangular (110) crystallographic plane of SrTiO3 substrates, with 1110]YSZ(001)//[001]SrTiO3(l 10) epitaxial relationship. Thus, the heterointerface presents symmetry discontinuity between the YSZ(001) film and the lower surface symmetry SrTiO3(110) substrate. Beyond this specific case, we envisage similar approaches to develop other innovative oxide interfaces showing similar crystal symmetry discontinuities.

U2 - 10.1063/1.4885089

DO - 10.1063/1.4885089

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VL - 104

IS - 25

M1 - A3

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