Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

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Abstract

In this work, the influence of gate oxide wear-out and breakdown (BD) on MOSFET output characteristics has been studied for short and long channel transistors. The experimental curves have been fitted to the BSIM4 model and have been introduced in a circuit simulator to study the effect of the oxide wear-out and BD in an analog circuit such as a current mirror. The results show important variations in the behaviour of the current mirror especially for the long channel transistor. © 2007 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)665-668
JournalMicroelectronics Reliability
Volume47
DOIs
Publication statusPublished - 1 Apr 2007

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