Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.
|Journal||Technical Digest-International Electron Devices Meeting|
|Publication status||Published - 1 Jan 2001|