Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

E. Y. Wu; J. Suñé; E. Nowak; W. Lai; J. McKenna

doi:10.1109/IEDM.2001.979448

Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

E. Y. Wu, J. Suñé, E. Nowak, W. Lai, J. McKenna

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Abstract

Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.

Original language	English
Pages (from-to)	125-128
Journal	Technical Digest-International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979448
Publication status	Published - 1 Jan 2001

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abstract = "Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.",

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AU - Wu, E. Y.

AU - Suñé, J.

AU - Nowak, E.

AU - Lai, W.

AU - McKenna, J.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.

AB - Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.

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DO - 10.1109/IEDM.2001.979448

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