TY - JOUR
T1 - Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements
AU - Wu, E. Y.
AU - Suñé, J.
AU - Nowak, E.
AU - Lai, W.
AU - McKenna, J.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.
AB - Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.
U2 - 10.1109/IEDM.2001.979448
DO - 10.1109/IEDM.2001.979448
M3 - Article
SP - 125
EP - 128
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
ER -