Weibull slopes, critical defect density, and the validity of stress-induced-leakage current (SILC) measurements

E. Y. Wu, J. Suñé, E. Nowak, W. Lai, J. McKenna

    Research output: Contribution to journalArticleResearchpeer-review

    10 Citations (Scopus)

    Abstract

    Voltage, temperature, and polarity dependence of Weibull slopes are carefully measured using area scaling method over a wide range of voltages and temperatures for several oxide thickness (TOX) values in comparison with direct method. We investigate the validity of stress-induced-leakage-current (SILC), ΔJ/J0|BD, as a measure for the critical defect density, NBD. Our finding clearly shows that the ΔJ/J0|BD cannot be used as a reliable measure of NBD. This work suggests that a re-evaluation of the breakdown models constructed from the SILC-based measurements is required in gate oxide reliability community, in particular, their validity in comparison with the statistically accurate breakdown data.
    Original languageEnglish
    Pages (from-to)125-128
    JournalTechnical Digest-International Electron Devices Meeting
    DOIs
    Publication statusPublished - 1 Jan 2001

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