Voltage modulation scanned probe oxidation

Francesc Pérez-Murano, Karen Birkelund, Kiyoshi Morimoto, John A. Dagata

    Research output: Contribution to journalArticleResearchpeer-review

    70 Citations (Scopus)

    Abstract

    Scanned probe microscope (SPM) oxidation with voltage modulation leads to a significant enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control of the structural and electrical properties of the SPM oxide. Variation of the voltage-pulse parameters confirms that the oxide dimensions can be controlled sensitively over a wide range of pulse parameters and that voltage modulation overcomes the self-limiting character of SPM oxidation by reducing the buildup of space charge within the oxide during growth. The enhancement can be used to increase the writing speed or lower the voltage, both beneficial for practical nanoelectronics fabrication. © 1999 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)199-201
    JournalApplied Physics Letters
    Volume75
    Issue number2
    DOIs
    Publication statusPublished - 12 Jul 1999

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