Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

German Agustin Patterson, J. Sune, E. Miranda

Research output: Contribution to journalArticleResearchpeer-review

23 Citations (Scopus)


© 1982-2012 IEEE. Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.
Original languageEnglish
Article number8049320
Pages (from-to)2044-2051
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Issue number12
Publication statusPublished - 1 Dec 2017


  • Memristor
  • Resistive switching


Dive into the research topics of 'Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications'. Together they form a unique fingerprint.

Cite this