Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO 2-based RRAM

Shibing Long, Luca Perniola, Carlo Cagli, Julien Buckley, Xiaojuan Lian, Enrique Miranda, Feng Pan, Ming Liu, Jordi Suñé

Research output: Contribution to journalArticleResearchpeer-review

115 Citations (Scopus)

Abstract

Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO 2-based RRAM was statistically investigated in terms of the CF conductance evolution. The RESET usually combines an abrupt conductance drop with a progressive phase ending with the complete CF rupture. RESET1 and RESET2 events, corresponding to the initial and final phase of RESET, are found to be controlled by the voltage and power in the CF, respectively. A Monte Carlo simulator based on the thermal dissolution model of unipolar RESET reproduces all of the experimental observations. The results contribute to an improved physics-based understanding on the switching mechanisms and provide additional support to the thermal dissolution model.
Original languageEnglish
Article number2929
JournalScientific Reports
Volume3
DOIs
Publication statusPublished - 25 Oct 2013

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