This work aims to establish the optimal conditions for contacting carbon nanotubes (CNT) using charged beams. First, we study the effect of charged beams on CNT-Field Effect Transistors (CNTFETs) by monitoring the CNTFET electrical characteristics simultaneously to the charged beam irradiation. Then, we establish the conditions for using electron and ion beam-induced-deposition of metal to define contacts to CNT. We demonstrate that by avoiding excessive charging of the CNTFET area during fabrication, devices with good electrical performance can be obtained. © 2008 Elsevier B.V. All rights reserved.
- Carbon nanotube
- Charged beam
- Electron beam-induced-deposition