Using electron and ion beams on carbon nanotube-based devices. Effects and considerations for nanofabrication

G. Rius, J. Llobet, M. J. Esplandiu, L. Solé, X. Borrisé, F. Pérez-Murano

Research output: Contribution to journalArticleResearchpeer-review

18 Citations (Scopus)

Abstract

This work aims to establish the optimal conditions for contacting carbon nanotubes (CNT) using charged beams. First, we study the effect of charged beams on CNT-Field Effect Transistors (CNTFETs) by monitoring the CNTFET electrical characteristics simultaneously to the charged beam irradiation. Then, we establish the conditions for using electron and ion beam-induced-deposition of metal to define contacts to CNT. We demonstrate that by avoiding excessive charging of the CNTFET area during fabrication, devices with good electrical performance can be obtained. © 2008 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)892-894
JournalMicroelectronic Engineering
Volume86
Issue number4-6
DOIs
Publication statusPublished - 1 Apr 2009

Keywords

  • Carbon nanotube
  • Charged beam
  • Electron beam-induced-deposition
  • Irradiation

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