Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy

Bernt Ketterer, Martin Heiss, Emanuele Uccelli, Jordi Arbiol, Anna Fontcuberta I Morral

    Research output: Contribution to journalArticleResearchpeer-review

    101 Citations (Scopus)


    In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate that resonant Raman scattering is a important tool to probe the electronic structure of novel materials. Exemplarily, we use this technique to elucidate the band structure of wurtzite GaAs at the Γ point. Within the experimental uncertainty we find that the free excitons at the edge of the wurtzite and the zinc-blende band gap exhibit equal energies. For the first time we show that the conduction band minimum in wurtzite GaAs is of Γ7 symmetry, meaning a small effective mass. We further find evidence for a light-hole-heavy-hole splitting of 103 meV at 10 K. © 2011 American Chemical Society.
    Original languageEnglish
    Pages (from-to)7585-7592
    JournalACS Nano
    Issue number9
    Publication statusPublished - 27 Sep 2011


    • electronic band structure
    • nanowires
    • resonant Raman
    • wurtzite GaAs

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