Abstract
A study was performed on the unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor. This model involves the capturing of the static current-voltage characteristics in all the operation regimes, above and below the threshold voltage. The numerical simulations based on the model were compared with quantum mechanical self-consistent simulations and experiments, with good agreement.
Original language | English |
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Pages (from-to) | 1061-1068 |
Journal | Journal of Applied Physics |
Volume | 94 |
DOIs | |
Publication status | Published - 15 Jul 2003 |