A study was performed on the unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor. This model involves the capturing of the static current-voltage characteristics in all the operation regimes, above and below the threshold voltage. The numerical simulations based on the model were compared with quantum mechanical self-consistent simulations and experiments, with good agreement.
|Journal||Journal of Applied Physics|
|Publication status||Published - 15 Jul 2003|