Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor

D. Jiménez, J. J. Sáenz, B. Iñíquez, J. Suñé, L. F. Marsal, J. Pallarès

Research output: Contribution to journalArticleResearchpeer-review

75 Citations (Scopus)

Abstract

A study was performed on the unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor. This model involves the capturing of the static current-voltage characteristics in all the operation regimes, above and below the threshold voltage. The numerical simulations based on the model were compared with quantum mechanical self-consistent simulations and experiments, with good agreement.
Original languageEnglish
Pages (from-to)1061-1068
JournalJournal of Applied Physics
Volume94
DOIs
Publication statusPublished - 15 Jul 2003

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