Understanding and optimization of hot-carrier reliability in Germanium-on-Silicon pMOSFETs

Debabrata Maji, Felice Crupi, Esteve Amat, Eddy Simoen, Brice De Jaeger, David P. Brunco, C. R. Manoj, V. Ramgopal Rao, Paolo Magnone, Gino Giusi, Calogero Pace, Luigi Pantisano, Jérôme Mitard, Rosana Rodríguez, Montserrat Nafría

Research output: Contribution to journalArticleResearchpeer-review

21 Citations (Scopus)


In this paper, a comprehensive study of hot-carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on k-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: 1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; 2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and 3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement. © 2009 IEEE.
Original languageEnglish
Pages (from-to)1063-1069
JournalIEEE Transactions on Electron Devices
Publication statusPublished - 27 Mar 2009


  • Germanium
  • High-k
  • Hot carrier (HC)
  • Impact ionization
  • Negative bias temperature instability (NBTI)


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