Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

E. Forsen; G. Abadal; S. Ghatnekar-Nilsson; J. Teva; J. Verd; R. Sandberg; W. Svendsen; F. Perez-Murano; J. Esteve; E. Figueras; F. Campabadal; L. Montelius; N. Barniol; A. Boisen

doi:https://doi.org/10.1063/1.1999838

Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

E. Forsen, G. Abadal, S. Ghatnekar-Nilsson, J. Teva, J. Verd, R. Sandberg, W. Svendsen, F. Perez-Murano, J. Esteve, E. Figueras, F. Campabadal, L. Montelius, N. Barniol, A. Boisen

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

92 Citations (Scopus)

Abstract

Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 agHz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. © 2005 American Institute of Physics.

Original language	English
Article number	043507
Journal	Applied Physics Letters
Volume	87
DOIs	https://doi.org/10.1063/1.1999838
Publication status	Published - 25 Jul 2005

Access to Document

https://doi.org/10.1063/1.1999838

Fingerprint Dive into the research topics of 'Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry'. Together they form a unique fingerprint.

Cite this

Forsen, E., Abadal, G., Ghatnekar-Nilsson, S., Teva, J., Verd, J., Sandberg, R., Svendsen, W., Perez-Murano, F., Esteve, J., Figueras, E., Campabadal, F., Montelius, L., Barniol, N., & Boisen, A. (2005). Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry. Applied Physics Letters, 87, [043507]. https://doi.org/10.1063/1.1999838

@article{c921060c06f4461bbc0a1f3f98ac8701,

title = "Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry",

abstract = "Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 agHz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. {\textcopyright} 2005 American Institute of Physics.",

author = "E. Forsen and G. Abadal and S. Ghatnekar-Nilsson and J. Teva and J. Verd and R. Sandberg and W. Svendsen and F. Perez-Murano and J. Esteve and E. Figueras and F. Campabadal and L. Montelius and N. Barniol and A. Boisen",

year = "2005",

month = jul,

day = "25",

doi = "https://doi.org/10.1063/1.1999838",

language = "English",

volume = "87",

}

Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry. / Forsen, E.; Abadal, G.; Ghatnekar-Nilsson, S.; Teva, J.; Verd, J.; Sandberg, R.; Svendsen, W.; Perez-Murano, F.; Esteve, J.; Figueras, E.; Campabadal, F.; Montelius, L.; Barniol, N.; Boisen, A.

In: Applied Physics Letters, Vol. 87, 043507, 25.07.2005.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

AU - Forsen, E.

AU - Abadal, G.

AU - Ghatnekar-Nilsson, S.

AU - Teva, J.

AU - Verd, J.

AU - Sandberg, R.

AU - Svendsen, W.

AU - Perez-Murano, F.

AU - Esteve, J.

AU - Figueras, E.

AU - Campabadal, F.

AU - Montelius, L.

AU - Barniol, N.

AU - Boisen, A.

PY - 2005/7/25

Y1 - 2005/7/25

N2 - Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 agHz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. © 2005 American Institute of Physics.

AB - Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 agHz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. © 2005 American Institute of Physics.

U2 - https://doi.org/10.1063/1.1999838

DO - https://doi.org/10.1063/1.1999838

M3 - Article

VL - 87

M1 - 043507

ER -