TY - JOUR
T1 - Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry
AU - Forsen, E.
AU - Abadal, G.
AU - Ghatnekar-Nilsson, S.
AU - Teva, J.
AU - Verd, J.
AU - Sandberg, R.
AU - Svendsen, W.
AU - Perez-Murano, F.
AU - Esteve, J.
AU - Figueras, E.
AU - Campabadal, F.
AU - Montelius, L.
AU - Barniol, N.
AU - Boisen, A.
PY - 2005/7/25
Y1 - 2005/7/25
N2 - Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 agHz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. © 2005 American Institute of Physics.
AB - Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 agHz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. © 2005 American Institute of Physics.
UR - https://ddd.uab.cat/record/116326
U2 - https://doi.org/10.1063/1.1999838
DO - https://doi.org/10.1063/1.1999838
M3 - Article
VL - 87
M1 - 043507
ER -