Ultra Thin Films of Atomic Force Microscopy Grown SiO2 as Gate Oxide on MOS Structures: Conduction and Breakdown Behavior

X. Blasco, M. Nafría, X. Aymerich

Research output: Contribution to journal › Article › Research

Cite this

@article{7de4e405df864c6489996b2aef4294ac,

title = "Ultra Thin Films of Atomic Force Microscopy Grown SiO2 as Gate Oxide on MOS Structures: Conduction and Breakdown Behavior",

author = "X. Blasco and M. Nafr{\'i}a and X. Aymerich",

year = "2003",

month = jan,

day = "1",

language = "English",

volume = "532",

pages = "732--736",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "535",

}