Ultra Thin Films of Atomic Force Microscopy Grown SiO2 as Gate Oxide on MOS Structures: Conduction and Breakdown Behavior

    Research output: Contribution to journalArticleResearch

    10 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)732-736
    JournalSurface Science
    Volume532
    Issue number535
    Publication statusPublished - 1 Jan 2003

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