Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

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Abstract

This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1127-1131
JournalMicroelectronics Reliability
Volume38
Issue number6-8
DOIs
Publication statusPublished - 1 Jan 1998

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