Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

R. Rodríguez; E. Miranda; M. Nafría; J. Suñé; X. Aymerich

doi:10.1016/S0026-2714(98)00142-5

Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, X. Aymerich

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.

Original language	English
Pages (from-to)	1127-1131
Journal	Microelectronics Reliability
Volume	38
Issue number	6-8
DOIs	https://doi.org/10.1016/S0026-2714(98)00142-5
Publication status	Published - 1 Jan 1998

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title = "Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films",

abstract = "This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. {\textcopyright} 1998 Elsevier Science Ltd. All rights reserved.",

author = "R. Rodr{\'i}guez and E. Miranda and M. Nafr{\'i}a and J. Su{\~n}{\'e} and X. Aymerich",

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AU - Miranda, E.

AU - Nafría, M.

AU - Suñé, J.

AU - Aymerich, X.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.

AB - This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.

U2 - 10.1016/S0026-2714(98)00142-5

DO - 10.1016/S0026-2714(98)00142-5

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 6-8

ER -

Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

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