Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Hamdy Abd-Elhamid; Benjamin Iñiguez; David Jiménez; Jaume Roig; Josep Pallarès; Lluís F. Marsal

doi:https://doi.org/10.1016/j.sse.2006.04.020

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Hamdy Abd-Elhamid, Benjamin Iñiguez, David Jiménez, Jaume Roig, Josep Pallarès, Lluís F. Marsal

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

32 Citations (Scopus)

Abstract

Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. © 2006 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	805-812
Journal	Solid-State Electronics
Volume	50
DOIs	https://doi.org/10.1016/j.sse.2006.04.020
Publication status	Published - 1 May 2006

Keywords

Device modeling
Downscaling
Gate all around
MOSFET
Subthreshold swing
Surrounding-gate MOSFET
Threshold voltage

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https://doi.org/10.1016/j.sse.2006.04.020

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@article{d849a9f6f6c24ade98cad2316190ed57,

title = "Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET",

abstract = "Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. {\textcopyright} 2006 Elsevier Ltd. All rights reserved.",

keywords = "Device modeling, Downscaling, Gate all around, MOSFET, Subthreshold swing, Surrounding-gate MOSFET, Threshold voltage",

author = "Hamdy Abd-Elhamid and Benjamin I{\~n}iguez and David Jim{\'e}nez and Jaume Roig and Josep Pallar{\`e}s and Marsal, {Llu{\'i}s F.}",

year = "2006",

month = may,

day = "1",

doi = "https://doi.org/10.1016/j.sse.2006.04.020",

language = "English",

volume = "50",

pages = "805--812",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET. / Abd-Elhamid, Hamdy; Iñiguez, Benjamin; Jiménez, David; Roig, Jaume; Pallarès, Josep; Marsal, Lluís F.

In: Solid-State Electronics, Vol. 50, 01.05.2006, p. 805-812.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

AU - Abd-Elhamid, Hamdy

AU - Iñiguez, Benjamin

AU - Jiménez, David

AU - Roig, Jaume

AU - Pallarès, Josep

AU - Marsal, Lluís F.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. © 2006 Elsevier Ltd. All rights reserved.

AB - Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. © 2006 Elsevier Ltd. All rights reserved.

KW - Device modeling

KW - Downscaling

KW - Gate all around

KW - MOSFET

KW - Subthreshold swing

KW - Surrounding-gate MOSFET

KW - Threshold voltage

U2 - https://doi.org/10.1016/j.sse.2006.04.020

DO - https://doi.org/10.1016/j.sse.2006.04.020

M3 - Article

VL - 50

SP - 805

EP - 812

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Abstract

Keywords

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