Abstract
Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. © 2006 Elsevier Ltd. All rights reserved.
Original language | English |
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Pages (from-to) | 805-812 |
Journal | Solid-State Electronics |
Volume | 50 |
DOIs | |
Publication status | Published - 1 May 2006 |
Keywords
- Device modeling
- Downscaling
- Gate all around
- MOSFET
- Subthreshold swing
- Surrounding-gate MOSFET
- Threshold voltage