Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Hamdy Abd-Elhamid, Benjamin Iñiguez, David Jiménez, Jaume Roig, Josep Pallarès, Lluís F. Marsal

Research output: Contribution to journalArticleResearchpeer-review

32 Citations (Scopus)

Abstract

Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. © 2006 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)805-812
JournalSolid-State Electronics
Volume50
DOIs
Publication statusPublished - 1 May 2006

Keywords

  • Device modeling
  • Downscaling
  • Gate all around
  • MOSFET
  • Subthreshold swing
  • Surrounding-gate MOSFET
  • Threshold voltage

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