Tuning the electronic properties of piezoresistive bilayer films based on α-(BEDT-TTF)<inf>2</inf>I<inf>3</inf>

Victor Lebedev; Elena Laukhina; Vladimir Laukhin; Concepciõ Rovira; Jaume Veciana

doi:10.1002/ejic.201402276

Tuning the electronic properties of piezoresistive bilayer films based on α-(BEDT-TTF)<inf>2</inf>I<inf>3</inf>

Victor Lebedev, Elena Laukhina, Vladimir Laukhin, Concepciõ Rovira, Jaume Veciana

Research output: Contribution to journal › Article › Research › peer-review

8 Citations (Scopus)

Abstract

We present a study of the influence of the iodine/solvent annealing temperature on the properties of piezoresistive bilayer films with layers of α-(BEDT-TTF)2I3 [BEDT-TTF = bis(ethylenedithio) tetrathiafulvalene]. The formation of the conductive layers was tested by XRD, direct current (dc) conductivity measurements, and SEM, and the electromechanical properties have also been studied. We demonstrate that it is possible to form bilayer (BL) films with an invariant gauge factor of ca. 10 but with the temperature dependence of the resistance variable from metallic to semiconductor-like by control of the annealing temperature. This control even permits the preparation of a BL film with temperature-independent resistance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	3927-3932
Journal	European Journal of Inorganic Chemistry
Issue number	24
DOIs	https://doi.org/10.1002/ejic.201402276
Publication status	Published - 1 Jan 2014

Keywords

Conducting materials
Molecular electronics
Organic metals
Sensors
Sulfur heterocycles
Thin films

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title = "Tuning the electronic properties of piezoresistive bilayer films based on α-(BEDT-TTF)2I3",

abstract = "We present a study of the influence of the iodine/solvent annealing temperature on the properties of piezoresistive bilayer films with layers of α-(BEDT-TTF)2I3 [BEDT-TTF = bis(ethylenedithio) tetrathiafulvalene]. The formation of the conductive layers was tested by XRD, direct current (dc) conductivity measurements, and SEM, and the electromechanical properties have also been studied. We demonstrate that it is possible to form bilayer (BL) films with an invariant gauge factor of ca. 10 but with the temperature dependence of the resistance variable from metallic to semiconductor-like by control of the annealing temperature. This control even permits the preparation of a BL film with temperature-independent resistance. {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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author = "Victor Lebedev and Elena Laukhina and Vladimir Laukhin and Concepci{\~o} Rovira and Jaume Veciana",

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doi = "10.1002/ejic.201402276",

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TY - JOUR

T1 - Tuning the electronic properties of piezoresistive bilayer films based on α-(BEDT-TTF)2I3

AU - Lebedev, Victor

AU - Laukhina, Elena

AU - Laukhin, Vladimir

AU - Rovira, Concepciõ

AU - Veciana, Jaume

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We present a study of the influence of the iodine/solvent annealing temperature on the properties of piezoresistive bilayer films with layers of α-(BEDT-TTF)2I3 [BEDT-TTF = bis(ethylenedithio) tetrathiafulvalene]. The formation of the conductive layers was tested by XRD, direct current (dc) conductivity measurements, and SEM, and the electromechanical properties have also been studied. We demonstrate that it is possible to form bilayer (BL) films with an invariant gauge factor of ca. 10 but with the temperature dependence of the resistance variable from metallic to semiconductor-like by control of the annealing temperature. This control even permits the preparation of a BL film with temperature-independent resistance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We present a study of the influence of the iodine/solvent annealing temperature on the properties of piezoresistive bilayer films with layers of α-(BEDT-TTF)2I3 [BEDT-TTF = bis(ethylenedithio) tetrathiafulvalene]. The formation of the conductive layers was tested by XRD, direct current (dc) conductivity measurements, and SEM, and the electromechanical properties have also been studied. We demonstrate that it is possible to form bilayer (BL) films with an invariant gauge factor of ca. 10 but with the temperature dependence of the resistance variable from metallic to semiconductor-like by control of the annealing temperature. This control even permits the preparation of a BL film with temperature-independent resistance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - Conducting materials

KW - Molecular electronics

KW - Organic metals

KW - Sensors

KW - Sulfur heterocycles

KW - Thin films

U2 - 10.1002/ejic.201402276

DO - 10.1002/ejic.201402276

M3 - Article

SP - 3927

EP - 3932

IS - 24

ER -

Tuning the electronic properties of piezoresistive bilayer films based on α-(BEDT-TTF)<inf>2</inf>I<inf>3</inf>

Abstract

Keywords

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