We present a study of the influence of the iodine/solvent annealing temperature on the properties of piezoresistive bilayer films with layers of α-(BEDT-TTF)2I3 [BEDT-TTF = bis(ethylenedithio) tetrathiafulvalene]. The formation of the conductive layers was tested by XRD, direct current (dc) conductivity measurements, and SEM, and the electromechanical properties have also been studied. We demonstrate that it is possible to form bilayer (BL) films with an invariant gauge factor of ca. 10 but with the temperature dependence of the resistance variable from metallic to semiconductor-like by control of the annealing temperature. This control even permits the preparation of a BL film with temperature-independent resistance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Journal||European Journal of Inorganic Chemistry|
|Publication status||Published - 1 Jan 2014|
- Conducting materials
- Molecular electronics
- Organic metals
- Sulfur heterocycles
- Thin films