We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube. © 2010 American Institute of Physics.
|Journal||Applied Physics Letters|
|Publication status||Published - 12 Apr 2010|