Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field

G. Fedorov, P. Barbara, D. Smirnov, D. Jiḿnez, S. Roche

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Abstract

We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube. © 2010 American Institute of Physics.
Original languageEnglish
Article number132101
JournalApplied Physics Letters
Volume96
DOIs
Publication statusPublished - 12 Apr 2010

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    Fedorov, G., Barbara, P., Smirnov, D., Jiḿnez, D., & Roche, S. (2010). Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field. Applied Physics Letters, 96, [132101]. https://doi.org/10.1063/1.3360214