© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
|Publication status||Published - 2 Mar 2016|
- two-dimensional materials