TRAPPISTe pixel sensor with 2 um SOI technology

Translated title of the contribution: TRAPPISTe pixel sensor with 2 um SOI technology

Maria Elena Martin Albarran

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Translated title of the contribution	TRAPPISTe pixel sensor with 2 um SOI technology
Original language	Multiple languages
Pages (from-to)	19-21
Journal	Nuclear instruments & methods in physics research. Section A, Accelerators, spectometers, detectors and associated equipment
Volume	633
Publication status	Published - 1 Jan 2011

Cite this

@article{2ffd1d9283ac4082a04e1f4d8015e5e9,

title = "TRAPPISTe pixel sensor with 2 um SOI technology",

author = "{Martin Albarran}, {Maria Elena}",

year = "2011",

month = jan,

day = "1",

language = "M{\'u}ltiples idiomas",

volume = "633",

pages = "19--21",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

}

TY - JOUR

T1 - TRAPPISTe pixel sensor with 2 um SOI technology

AU - Martin Albarran, Maria Elena

PY - 2011/1/1

Y1 - 2011/1/1

M3 - Artículo

VL - 633

SP - 19

EP - 21

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

ER -