Transport in silicon nanowires: Role of radial dopant profile

Troels Markussen, Riccardo Rurali, Antti Pekka Jauho, Mads Brandbyge

Research output: Contribution to journalArticleResearchpeer-review

14 Citations (Scopus)

Abstract

We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: Surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can be quantitatively predicted in terms of the scattering properties of the single dopant atoms, implying that relatively simple calculations are sufficient in practical device modeling. © Springer Science+Business Media LLC 2007.
Original languageEnglish
Pages (from-to)324-327
JournalJournal of Computational Electronics
Volume7
Issue number3
DOIs
Publication statusPublished - 9 Sep 2008

Keywords

  • DFT transport calculations
  • Dopant scattering
  • Mean-free path
  • Sample-to-sample fluctuations
  • Silicon nanowires

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