Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions

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Abstract

The transient behavior of current density distributions in the nitride of MNOS devices subjected to constant current stress has been studied via numerical calculation and on the basis of Arnett's trapping model. We have found that under low injection conditions the current distributions can be well described by two parameters which have an easy physical interpretation and the time evolution of which is directly related to the characteristics of the capture centers. A new method to obtain the trapping parameters, based on the measure of the transient of current at the anode of samples with different nitride thickness, is proposed. © 1991.
Original languageEnglish
Pages (from-to)5-17
JournalMicroelectronics Journal
Volume22
DOIs
Publication statusPublished - 1 Jan 1991

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