Toward the Optimized Spintronic Response of Sn-Doped IrO <inf>2</inf> Thin Films

Eduardo Arias-Egido; María Angeles Laguna-Marco; Cristina Piquer; Roberto Boada; Sofía Díaz-Moreno

doi:10.1002/adfm.201806754

Toward the Optimized Spintronic Response of Sn-Doped IrO <inf>2</inf> Thin Films

Eduardo Arias-Egido, María Angeles Laguna-Marco, Cristina Piquer, Roberto Boada, Sofía Díaz-Moreno

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Abstract

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Amorphous and polycrystalline Sn-doped IrO 2 thin films, Ir 1-x Sn x O 2 , are grown for the first time. Their electrical response and strength of the spin–orbit coupling are studied in order to better understand and tailor its performance as spin current detector material. These experiments prove that the resistivity of IrO 2 can be tuned over several orders of magnitude by controlling the doping content in both the amorphous and the polycrystalline state. In addition, growing amorphous samples increase the resistivity, thus improving the spin current to charge current conversion. As far as the spin–orbit coupling is concerned, the system not only remains in a strong spin–orbit coupling regime but it seems to undergo a slight enhancement in the amorphous state as well as in the Sn-doped samples.

Original language	English
Article number	1806754
Journal	Advanced Functional Materials
Volume	29
DOIs	https://doi.org/10.1002/adfm.201806754
Publication status	Published - 7 Mar 2019

Keywords

electrical properties
iridates
spintronics
spin–orbit coupling interactions
thin films

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title = "Toward the Optimized Spintronic Response of Sn-Doped IrO 2 Thin Films",

abstract = "{\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Amorphous and polycrystalline Sn-doped IrO 2 thin films, Ir 1-x Sn x O 2 , are grown for the first time. Their electrical response and strength of the spin–orbit coupling are studied in order to better understand and tailor its performance as spin current detector material. These experiments prove that the resistivity of IrO 2 can be tuned over several orders of magnitude by controlling the doping content in both the amorphous and the polycrystalline state. In addition, growing amorphous samples increase the resistivity, thus improving the spin current to charge current conversion. As far as the spin–orbit coupling is concerned, the system not only remains in a strong spin–orbit coupling regime but it seems to undergo a slight enhancement in the amorphous state as well as in the Sn-doped samples.",

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author = "Eduardo Arias-Egido and Laguna-Marco, {Mar{\'i}a Angeles} and Cristina Piquer and Roberto Boada and Sof{\'i}a D{\'i}az-Moreno",

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doi = "10.1002/adfm.201806754",

language = "English",

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TY - JOUR

T1 - Toward the Optimized Spintronic Response of Sn-Doped IrO 2 Thin Films

AU - Arias-Egido, Eduardo

AU - Laguna-Marco, María Angeles

AU - Piquer, Cristina

AU - Boada, Roberto

AU - Díaz-Moreno, Sofía

PY - 2019/3/7

Y1 - 2019/3/7

N2 - © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Amorphous and polycrystalline Sn-doped IrO 2 thin films, Ir 1-x Sn x O 2 , are grown for the first time. Their electrical response and strength of the spin–orbit coupling are studied in order to better understand and tailor its performance as spin current detector material. These experiments prove that the resistivity of IrO 2 can be tuned over several orders of magnitude by controlling the doping content in both the amorphous and the polycrystalline state. In addition, growing amorphous samples increase the resistivity, thus improving the spin current to charge current conversion. As far as the spin–orbit coupling is concerned, the system not only remains in a strong spin–orbit coupling regime but it seems to undergo a slight enhancement in the amorphous state as well as in the Sn-doped samples.

AB - © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Amorphous and polycrystalline Sn-doped IrO 2 thin films, Ir 1-x Sn x O 2 , are grown for the first time. Their electrical response and strength of the spin–orbit coupling are studied in order to better understand and tailor its performance as spin current detector material. These experiments prove that the resistivity of IrO 2 can be tuned over several orders of magnitude by controlling the doping content in both the amorphous and the polycrystalline state. In addition, growing amorphous samples increase the resistivity, thus improving the spin current to charge current conversion. As far as the spin–orbit coupling is concerned, the system not only remains in a strong spin–orbit coupling regime but it seems to undergo a slight enhancement in the amorphous state as well as in the Sn-doped samples.

KW - electrical properties

KW - iridates

KW - spintronics

KW - spin–orbit coupling interactions

KW - thin films

U2 - 10.1002/adfm.201806754

DO - 10.1002/adfm.201806754

M3 - Article

SN - 1616-301X

VL - 29

JO - Advanced Functional Materials

JF - Advanced Functional Materials

M1 - 1806754

ER -

Toward the Optimized Spintronic Response of Sn-Doped IrO <inf>2</inf> Thin Films

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Keywords

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