Toward the Optimized Spintronic Response of Sn-Doped IrO <inf>2</inf> Thin Films

Eduardo Arias-Egido, María Angeles Laguna-Marco, Cristina Piquer, Roberto Boada, Sofía Díaz-Moreno

    Research output: Contribution to journalArticleResearch

    1 Citation (Scopus)

    Abstract

    © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Amorphous and polycrystalline Sn-doped IrO 2 thin films, Ir 1-x Sn x O 2 , are grown for the first time. Their electrical response and strength of the spin–orbit coupling are studied in order to better understand and tailor its performance as spin current detector material. These experiments prove that the resistivity of IrO 2 can be tuned over several orders of magnitude by controlling the doping content in both the amorphous and the polycrystalline state. In addition, growing amorphous samples increase the resistivity, thus improving the spin current to charge current conversion. As far as the spin–orbit coupling is concerned, the system not only remains in a strong spin–orbit coupling regime but it seems to undergo a slight enhancement in the amorphous state as well as in the Sn-doped samples.
    Original languageEnglish
    Article number1806754
    JournalAdvanced Functional Materials
    Volume29
    DOIs
    Publication statusPublished - 7 Mar 2019

    Keywords

    • electrical properties
    • iridates
    • spintronics
    • spin–orbit coupling interactions
    • thin films

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