Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction

Eloi Marigó, Marc Sansa, Francesc Pérez-Murano, Arantxa Uranga, Núria Barniol

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

© 2015 by the authors; licensee MDPI, Basel, Switzerland. A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.
Original languageEnglish
Pages (from-to)17036-17047
JournalSensors
Volume15
DOIs
Publication statusPublished - 14 Jul 2015

Keywords

  • CMOS-NEMS
  • Mechanical resonators
  • NEMS
  • Piezoresistive transduction
  • Polysilicon nanowires

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