Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction

Eloi Marigó, Marc Sansa, Francesc Pérez-Murano, Arantxa Uranga, Núria Barniol*

*Corresponding author for this work

Research output: Contribution to journalArticleResearchpeer-review

2 Citations (Scopus)


A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

Original languageEnglish
Pages (from-to)17036-17047
Number of pages12
Issue number7
Publication statusPublished - 14 Jul 2015


  • Mechanical resonators
  • NEMS
  • Piezoresistive transduction
  • Polysilicon nanowires


Dive into the research topics of 'Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction'. Together they form a unique fingerprint.

Cite this