Threshold switching and conductance quantization in electroformed Al/HfO2/Si(p) structures

J. Suñé; E. Miranda; D. Jiménez; C. Martínez-Domingo; X. Saura; S. Long; M. Liu; J. M. Rafí; F. Campabadal

Threshold switching and conductance quantization in electroformed Al/HfO2/Si(p) structures

J. Suñé, E. Miranda, D. Jiménez, C. Martínez-Domingo, X. Saura, S. Long, M. Liu, J. M. Rafí, F. Campabadal

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	-
Journal	Japanese Journal of Applied Physics
Publication status	Published - 1 Jan 2012

Cite this

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title = "Threshold switching and conductance quantization in electroformed Al/HfO2/Si(p) structures",

author = "J. Su{\~n}{\'e} and E. Miranda and D. Jim{\'e}nez and C. Mart{\'i}nez-Domingo and X. Saura and S. Long and M. Liu and Raf{\'i}, {J. M.} and F. Campabadal",

year = "2012",

month = jan,

day = "1",

language = "English",

pages = "--",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Threshold switching and conductance quantization in electroformed Al/HfO2/Si(p) structures

AU - Suñé, J.

AU - Miranda, E.

AU - Jiménez, D.

AU - Martínez-Domingo, C.

AU - Saura, X.

AU - Long, S.

AU - Liu, M.

AU - Rafí, J. M.

AU - Campabadal, F.

PY - 2012/1/1

Y1 - 2012/1/1

M3 - Article

SP - -

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

ER -