Three-state resistive switching in HfO<inf>2</inf>-based RRAM

Xiaojuan Lian; Enrique Miranda; Shibing Long; Luca Perniola; Ming Liu; Jordi Suñé

doi:10.1016/j.sse.2014.04.016

Three-state resistive switching in HfO<inf>2</inf>-based RRAM

Xiaojuan Lian, Enrique Miranda, Shibing Long, Luca Perniola, Ming Liu, Jordi Suñé

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.

Original language	English
Pages (from-to)	38-44
Journal	Solid-State Electronics
Volume	98
DOIs	https://doi.org/10.1016/j.sse.2014.04.016
Publication status	Published - 1 Jan 2014

Keywords

Non-voltatile memories
Quantum wire
Resistive switching
RRAM

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10.1016/j.sse.2014.04.016

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title = "Three-state resistive switching in HfO2-based RRAM",

abstract = "We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. {\textcopyright} 2014 Elsevier Ltd. All rights reserv.",

keywords = "Non-voltatile memories, Quantum wire, Resistive switching, RRAM",

author = "Xiaojuan Lian and Enrique Miranda and Shibing Long and Luca Perniola and Ming Liu and Jordi Su{\~n}{\'e}",

year = "2014",

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doi = "10.1016/j.sse.2014.04.016",

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T1 - Three-state resistive switching in HfO2-based RRAM

AU - Lian, Xiaojuan

AU - Miranda, Enrique

AU - Long, Shibing

AU - Perniola, Luca

AU - Liu, Ming

AU - Suñé, Jordi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.

AB - We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.

KW - Non-voltatile memories

KW - Quantum wire

KW - Resistive switching

KW - RRAM

U2 - 10.1016/j.sse.2014.04.016

DO - 10.1016/j.sse.2014.04.016

M3 - Article

VL - 98

SP - 38

EP - 44

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -

Three-state resistive switching in HfO<inf>2</inf>-based RRAM

Abstract

Keywords

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