Abstract
We investigate the reset transition of HfO2-based RRAM structures with emphasis on revealing three-state resistive switching effects. We study nonpolar switching in Pt/HfO2/Pt and unipolar/bipolar switching in Pt/Ti/HfO2/Pt structures, respectively. However, three-state resistive switching is only confirmed in the former case by means of various reset methodologies. Using two-step reset experiments it is shown that the transition to the complete reset state occurs at higher voltages if the CF first drops to the intermediate state. © 2014 Elsevier Ltd. All rights reserv.
Original language | English |
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Pages (from-to) | 38-44 |
Journal | Solid-State Electronics |
Volume | 98 |
DOIs | |
Publication status | Published - 1 Jan 2014 |
Keywords
- Non-voltatile memories
- Quantum wire
- Resistive switching
- RRAM