Third-mode 48 MHz free-free beam resonator used as a RF balun

J. L. López, J. Giner, G. Murillo, F. Torres, E. Marigó, A. Uranga, G. Abadal, N. Barniol*

*Corresponding author for this work

Research output: Contribution to journalArticleResearchpeer-review

2 Citations (Scopus)

Abstract

In this paper, we present a new functional MEMS device monolithically integrated in a CMOS technology which is capable to mechanically perform the function of a balun, i.e. convert electrical signals that are unbalanced (single ended) to balanced ones. The RF-MEMS device consists on a 3rd order lateral mode free-free beam with a 48 MHz resonance frequency. The resonator is electrically actuated and capacitively detected allowing a fully integrated system. Two electrode configurations allow the signal phase shift between the two outputs of the RF-CMOS-MEMS device.

Original languageEnglish
Pages (from-to)1256-1258
Number of pages3
JournalMicroelectronic Engineering
Volume87
Issue number5-8
DOIs
Publication statusPublished - May 2010

Keywords

  • CMOS-MEMS
  • Micromechanical baluns
  • Phase inversion
  • RF-MEMS

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