Thermal rectification in silicon by a graded distribution of defects

Riccardo Dettori, Claudio Melis, Riccardo Rurali, Luciano Colombo

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    17 Citations (Scopus)

    Abstract

    © 2016 Author(s). We discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. We consider a graded population of both Ge substitutional defects and nanovoids, distributed along the direction of an applied thermal bias, and predict a rectification factor comparable to what is observed in other low-dimensional Si-based nanostructures. By considering several defect distribution profiles, thermal bias conditions, and sample sizes, the present results suggest that a possible way for tuning the thermal rectification is by defect engineering.
    Original languageEnglish
    Article number215102
    JournalJournal of Applied Physics
    Volume119
    Issue number21
    DOIs
    Publication statusPublished - 7 Jun 2016

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