Thermal rectification in inhomogeneous nanoporous Si devices

M. Criado-Sancho; F. X. Alvarez; D. Jou

doi:https://doi.org/10.1063/1.4816685

Thermal rectification in inhomogeneous nanoporous Si devices

M. Criado-Sancho, F. X. Alvarez, D. Jou

Research output: Contribution to journal › Article › Research › peer-review

23 Citations (Scopus)

Abstract

We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.

Original language	English
Article number	053512
Journal	Journal of Applied Physics
Volume	114
DOIs	https://doi.org/10.1063/1.4816685
Publication status	Published - 7 Aug 2013

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@article{0db1f1718f6f47bab1c5120f89e2c054,

title = "Thermal rectification in inhomogeneous nanoporous Si devices",

abstract = "We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. {\textcopyright} 2013 AIP Publishing LLC.",

author = "M. Criado-Sancho and Alvarez, {F. X.} and D. Jou",

year = "2013",

month = aug,

day = "7",

doi = "https://doi.org/10.1063/1.4816685",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Thermal rectification in inhomogeneous nanoporous Si devices

AU - Criado-Sancho, M.

AU - Alvarez, F. X.

AU - Jou, D.

PY - 2013/8/7

Y1 - 2013/8/7

N2 - We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.

AB - We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.

U2 - https://doi.org/10.1063/1.4816685

DO - https://doi.org/10.1063/1.4816685

M3 - Article

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

M1 - 053512

ER -

Thermal rectification in inhomogeneous nanoporous Si devices

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