Thermal rectification in inhomogeneous nanoporous Si devices

M. Criado-Sancho, F. X. Alvarez, D. Jou

Research output: Contribution to journalArticleResearchpeer-review

19 Citations (Scopus)

Abstract

We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.
Original languageEnglish
Article number053512
JournalJournal of Applied Physics
Volume114
DOIs
Publication statusPublished - 7 Aug 2013

Fingerprint Dive into the research topics of 'Thermal rectification in inhomogeneous nanoporous Si devices'. Together they form a unique fingerprint.

Cite this