Abstract
We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.
Original language | English |
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Article number | 053512 |
Journal | Journal of Applied Physics |
Volume | 114 |
DOIs | |
Publication status | Published - 7 Aug 2013 |