Thermal rectification in inhomogeneous nanoporous Si devices

M. Criado-Sancho; F. X. Alvarez; D. Jou

doi:https://doi.org/10.1063/1.4816685

Thermal rectification in inhomogeneous nanoporous Si devices

M. Criado-Sancho, F. X. Alvarez, D. Jou

Research output: Contribution to journal › Article › Research › peer-review

20 Citations (Scopus)

Abstract

We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.

Original language	English
Article number	053512
Journal	Journal of Applied Physics
Volume	114
DOIs	https://doi.org/10.1063/1.4816685
Publication status	Published - 7 Aug 2013

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title = "Thermal rectification in inhomogeneous nanoporous Si devices",

abstract = "We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. {\textcopyright} 2013 AIP Publishing LLC.",

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AU - Alvarez, F. X.

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AB - We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.

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