We analyze the thermal rectification coefficient of a graded inhomogeneous porous Si device, as a function of the spatial porosity distribution, taking into account ballistic phonon-pore collisions when phonon mean-free path is much longer than the radius of the pores. We compare the results for the thermal rectifying coefficient with that for a discontinuous bulk-porous device having the same average porosity. © 2013 AIP Publishing LLC.
|Journal||Journal of Applied Physics|
|Publication status||Published - 7 Aug 2013|