Thermal boundary resistance in semiconductors by non-equilibrium thermodynamics

R. Dettori, C. Melis, X. Cartoixà, R. Rurali, L. Colombo

Research output: Contribution to journalReview articleResearchpeer-review

13 Citations (Scopus)

Abstract

© 2016, © 2016 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. We critically address the problem of predicting the thermal boundary resistance at the interface between two semiconductors by atomistic simulations. After reviewing the available models, lattice dynamics calculations and molecular dynamics simulation protocols, we reformulate this problem in the language of non-equilibrium thermodynamics, providing an elegant, robust and valuable theoretical framework for the direct calculation of the thermal boundary resistance through molecular dynamics simulations. The foundation of the method, as well as its subtleties and the details of its actual implementation are presented. Finally, the Si/Ge interface showcase is discussed as the prototypical example of semiconductor heterojunction whose thermal properties are paramount in many front-edge nanotechnologies.
Original languageEnglish
Pages (from-to)246-261
JournalAdvances in Physics: X
Volume1
Issue number2
DOIs
Publication statusPublished - 3 Mar 2016

Keywords

  • 44.10.+i Heat conduction
  • 63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
  • 65.40.-b Thermal properties of crystalline solids
  • 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids
  • Heat transport
  • atomistic simulations
  • semiconductor interfaces
  • thermal boundary resistance
  • thermal conductivity
  • thermal waves

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