Theoretical evidence for the kick-out mechanism for B diffusion in SiC

R. Rurali, P. Godignon, J. Rebollo, P. Ordejón, E. Hernández

    Research output: Contribution to journalArticleResearch

    21 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)2989-2991
    JournalApplied Physics Letters
    Volume81
    Issue number16
    DOIs
    Publication statusPublished - 1 Oct 2002

    Cite this

    Rurali, R., Godignon, P., Rebollo, J., Ordejón, P., & Hernández, E. (2002). Theoretical evidence for the kick-out mechanism for B diffusion in SiC. Applied Physics Letters, 81(16), 2989-2991. https://doi.org/10.1063/1.1515369