Abstract
The influence of geometrical and physical parameters of self-assembled SiGe/Si nanoislands on their energy has been investigated theoretically. The island energy minimum was shown to depend on the growth temperature and Si content in the islands. The results of the theoretical calculations are compared with experimental data obtained by atomic force microscopy and Raman spectroscopy (RS). © 2003 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 1027-1031 |
Journal | Materials Science and Engineering C |
Volume | 23 |
Issue number | 6-8 |
DOIs | |
Publication status | Published - 15 Dec 2003 |
Keywords
- AFM
- Elastic strain
- GeSi nanoislads
- Raman
- X-ray