We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. © 2012 Elsevier B.V.
|Journal||Physics Letters, Section A: General, Atomic and Solid State Physics|
|Publication status||Published - 9 Apr 2012|
- Heat rectification
- Phonon hydrodynamics
- Porous Si
Criado-Sancho, M., Del Castillo, L. F., Casas-Vázquez, J., & Jou, D. (2012). Theoretical analysis of thermal rectification in a bulk Si/nanoporous Si device. Physics Letters, Section A: General, Atomic and Solid State Physics, 376, 1641-1644. https://doi.org/10.1016/j.physleta.2012.03.045