Theoretical analysis of thermal rectification in a bulk Si/nanoporous Si device

M. Criado-Sancho; L. F. Del Castillo; J. Casas-Vázquez; D. Jou

doi:https://doi.org/10.1016/j.physleta.2012.03.045

Theoretical analysis of thermal rectification in a bulk Si/nanoporous Si device

M. Criado-Sancho, L. F. Del Castillo, J. Casas-Vázquez, D. Jou

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

23 Citations (Scopus)

Abstract

We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. © 2012 Elsevier B.V.

Original language	English
Pages (from-to)	1641-1644
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	376
DOIs	https://doi.org/10.1016/j.physleta.2012.03.045
Publication status	Published - 9 Apr 2012

Keywords

Heat rectification
Phonon hydrodynamics
Phononics
Porous Si

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https://doi.org/10.1016/j.physleta.2012.03.045

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abstract = "We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. {\textcopyright} 2012 Elsevier B.V.",

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AU - Criado-Sancho, M.

AU - Del Castillo, L. F.

AU - Casas-Vázquez, J.

AU - Jou, D.

PY - 2012/4/9

Y1 - 2012/4/9

N2 - We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. © 2012 Elsevier B.V.

AB - We present a theoretical analysis of thermal rectification in a porous Si/bulk Si device, taking into account ballistic effects in phonon-pore collisions when phonon mean free path is much longer than the radius of the pores. Starting from an approximate analytical expression for the effective thermal conductivity of porous Si, we obtain the thermal rectifying coefficient of the device as a function of porosity, pore size, temperature interval, and relative lengths of porous and bulk samples. © 2012 Elsevier B.V.

KW - Heat rectification

KW - Phonon hydrodynamics

KW - Phononics

KW - Porous Si

U2 - https://doi.org/10.1016/j.physleta.2012.03.045

DO - https://doi.org/10.1016/j.physleta.2012.03.045

M3 - Article

VL - 376

SP - 1641

EP - 1644

ER -

Theoretical analysis of thermal rectification in a bulk Si/nanoporous Si device

Abstract

Keywords

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